公开(公告)号：US20040053169A1

公开(公告)日：2004-03-18

申请号：US10065095

申请日：2002-09-17

Applicant: International Business Machines Corporation

Inventor： Louis M. Kindt

IPC: G03F007/20 ,  G21G005/00 ,  G21K005/00 ,  G03B027/52

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70875

Abstract: A method and system to minimize the affects of thermal gradient distortion in reticles. A heat source and filter or filters are used to control which part or parts of the reticle receive additional radiation. The heat created by this additional radiation minimizes any thermal gradients across the mask by supplying a constant heat flux to the entire surface of the mask. The heat source can also be used to preheat the reticle to minimize any transient start-up effects.

Abstract translation: 一种减少光栅中热梯度失真的影响的方法和系统。 使用热源和过滤器或过滤器来控制掩模版的哪个部分或部分接收额外的辐射。 这种附加辐射产生的热量通过向掩模的整个表面提供恒定的热通量来最小化穿过掩模的任何热梯度。 热源也可用于预热掩模版，以最小化任何瞬时启动效应。

公开(公告)号：US20040131947A1

公开(公告)日：2004-07-08

申请号：US10248300

申请日：2003-01-07

Applicant: International Business Machines Corporation

Inventor： Emily Fisch Gallagher ,  Louis M. Kindt ,  Mark Lawliss ,  Kenneth C. Racette ,  Carey W. Thiel

IPC: G03F009/00

CPC classification number: G03F1/72 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: A reflective mask, useful in extreme ultraviolet lithography (EUVL), and method of formation are disclosed. Instead of patterning an absorbing film stack, as is the case with conventional EUVL masks, the reflective film stack itself is patterned and etched to form a trench in the reflective stack. A hard mask is deposited directly on the reflective substrate. It is patterned and repaired. Then the reflective film is removed in the patterned area to create absorbing trenches. The hard mask may then be stripped or remain in place on the final mask. A liner may be formed on the trench to absorb radiation and protect the sidewalls.

Abstract translation: 公开了一种用于极紫外光刻（EUVL）的反射掩模和形成方法。 与常规EUVL掩模的情况一样，代替图案化吸收膜堆叠，反射膜堆叠本身被图案化和蚀刻以在反射堆叠中形成沟槽。 硬掩模直接沉积在反射基板上。 它是图案和修复。 然后在图案化区域中去除反射膜以产生吸收沟槽。 然后可以将硬掩模剥离或保留在最终掩模上的适当位置。 可以在沟槽上形成衬垫以吸收辐射并保护侧壁。

公开(公告)号：US20040009408A1

公开(公告)日：2004-01-15

申请号：US10064401

申请日：2002-07-10

Applicant: International Business Machines Corporation

Inventor： Emily E. Fisch ,  Louis M. Kindt ,  James P. Levin ,  Michael R. Schmidt ,  Carey T. Williams

IPC: G03F001/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/72

Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.

Abstract translation: 极紫外光刻（EUVL）掩模结构及相关的形成方法。 在缓冲层和吸收层之间提供第一导电层，使得缓冲层位于多层叠层上。 多层堆叠适于基本上反射入射在其上的EUV辐射。 吸收层适于吸收入射在其上的基本上所有的EUV辐射。 在吸收层中形成掩模图案。 在吸收层中形成掩模图案伴随着在吸收层中无意中形成缺陷。 该缺陷随后被修复。 掩模图案可以在露出多层堆叠的一部分的基本上无缺陷的工艺中延伸到第一导电层中并进入缓冲层。 可以在吸收层上提供第二导电层，其中掩模图案也形成在第二导电层中。