Semiconductor memory with access protection scheme
    1.
    发明授权
    Semiconductor memory with access protection scheme 有权
    半导体存储器具有访问保护方案

    公开(公告)号:US07249231B2

    公开(公告)日:2007-07-24

    申请号:US10781974

    申请日:2004-02-18

    IPC分类号: G06F12/00

    CPC分类号: G06F12/1425

    摘要: A memory, particularly but not limitatively a flash memory, comprises at least one data storage area comprising a plurality of data storage locations, and an access circuitry for accessing the data storage locations for either retrieving or altering a data content thereof, depending for example on a memory user request. The memory includes at least one first user-configurable flag element and a second user-configurable flag element. Both the at least one first and the second flag elements are used by a user to set a protected state of the respective data storage area against alteration of the content of the data storage locations thereof. The protected state defined by setting the first flag element is user-removable, i.e., it can be removed by request from the user, so as to enable again the alteration of the content of the data storage area. On the contrary, the protected state defined by setting the second flag element is permanent and, once set, it cannot be removed: the data storage area becomes unalterable.

    摘要翻译: 存储器,特别地但不限于闪速存储器,包括至少一个包括多个数据存储位置的数据存储区域,以及用于访问数据存储位置以用于检索或更改其数据内容的访问电路,这取决于例如 内存用户请求。 存储器包括至少一个第一用户可配置标志元件和第二用户可配置标志元件。 所述至少一个第一和第二标志元素都由用户用于设置相应数据存储区域的受保护状态以防其数据存储位置的内容的改变。 通过设置第一标志元素定义的受保护状态是用户可移除的,即,可以通过来自用户的请求去除它,以便再次启用数据存储区域的内容的改变。 相反,通过设置第二标志元素定义的受保护状态是永久性的,一旦设置,就不能被去除:数据存储区域变得不可更改。