公开(公告)号：US20130049169A1

公开(公告)日：2013-02-28

申请号：US13345966

申请日：2012-01-09

申请人： JAE HYUN YOO ,  Jong Min Kim

发明人： JAE HYUN YOO ,  Jong Min Kim

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/735 ,  H01L29/0821 ,  H01L29/1008

摘要： A bipolar junction transistor includes a first trench element isolation film, a second trench element isolation film, a first base region, a second base region, a collector region, a first well, a second well, an emitter, a collector, and bases. The second well is formed by implanting an n-type impurity into the semiconductor substrate, and the emitter is formed by implanting the n-type impurity into the emitter region between the first trench element isolation film and the second well. The collector is formed by implanting the n-type impurity into the collector region between the first well and the second trench element isolation film, and the bases are formed by implanting the p-type impurity into the first base region and into the second base region between the emitter region and the second well.

摘要翻译： 双极结型晶体管包括第一沟槽元件隔离膜，第二沟槽元件隔离膜，第一基极区，第二基极区，集电极区，第一阱，第二阱，发射极，集电极和基极。 通过将n型杂质注入到半导体衬底中而形成第二阱，并且通过将n型杂质注入到第一沟槽元件隔离膜和第二阱之间的发射极区域中来形成发射极。 集电体通过将n型杂质注入第一阱和第二沟槽元件隔离膜之间的集电极区域而形成，并且通过将p型杂质注入第一基极区域并进入第二基极区域而形成基极 在发射极区域和第二阱之间。