公开(公告)号：US11127668B2

公开(公告)日：2021-09-21

申请号：US16570049

申请日：2019-09-13

申请人： JCET Semiconductor (Shaoxing) Co., Ltd.

发明人： Il Kwon Shim ,  Pandi C. Marimuthu ,  Won Kyoung Choi ,  Sze Ping Goh ,  Jose A. Caparas

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00 ,  H01L25/10

摘要： A semiconductor device comprises a first semiconductor package including a conductive layer. A substrate including an interconnect structure is disposed over the conductive layer. The interconnect structure of the substrate with the conductive layer of the first semiconductor package are self-aligned. A plurality of openings is formed in the substrate. An adhesive is disposed between the substrate and the first semiconductor package and in the openings of the substrate. A redistribution layer (RDL) is formed over the first semiconductor package opposite the substrate. A pitch of the substrate is different from a pitch of the RDL. The adhesive extends to the interconnect structure of the substrate. A second semiconductor package is disposed over the substrate and the first semiconductor package.