Internal Voltage Generation Circuit of Semiconductor Memory Device
    1.
    发明申请
    Internal Voltage Generation Circuit of Semiconductor Memory Device 有权
    半导体存储器件的内部电压产生电路

    公开(公告)号:US20070115746A1

    公开(公告)日:2007-05-24

    申请号:US11623569

    申请日:2007-01-16

    申请人: Jae Im Jae-jin Lee

    发明人: Jae Im Jae-jin Lee

    IPC分类号: G11C5/14

    摘要: Disclosed herein is an internal voltage generation circuit of a semiconductor memory device which is capable of supplying voltages of different levels to a column path & control logic and data path & control logic in the memory device according to different operation modes of the memory device. The column path & control logic and data path & control logic are applied with a normal operating voltage when they are involved in the current operation mode of the memory device, whereas with a lower voltage when they are not involved. Therefore, the present invention has the effect of efficiently managing internal voltages of the semiconductor memory device and reducing current leakage of the memory device and, in turn, unnecessary power consumption thereof.

    摘要翻译: 本文公开了一种半导体存储器件的内部电压产生电路,其能够根据存储器件的不同操作模式向存储器件中的列路径和控制逻辑以及数据路径和控制逻辑提供不同电平的电压。 列路径和控制逻辑以及数据路径和控制逻辑在其参与存储器件的当前操作模式时被应用于正常工作电压,而当它们不涉及时具有较低的电压。 因此,本发明具有有效地管理半导体存储器件的内部电压并且减少存储器件的电流泄漏的效果,并且反过来又导致其不必要的功耗。

    Method for controlling precharge timing of memory device and apparatus thereof
    2.
    发明申请
    Method for controlling precharge timing of memory device and apparatus thereof 有权
    用于控制存储器件的预充电定时的方法及其装置

    公开(公告)号:US20060140032A1

    公开(公告)日:2006-06-29

    申请号:US11108494

    申请日:2005-04-18

    申请人: Jae Im Kang Lee

    发明人: Jae Im Kang Lee

    IPC分类号: G11C7/00

    摘要: A method for controlling a precharge timing of a memory device is disclosed. The method includes making timing of generation of a signal for determining a precharge timing in a normal operation and a signal for determining a precharge timing in a refresh operation different from each other by making timing of generation of a signal for controlling the normal operation and a signal for controlling the refresh operation different from each other.

    摘要翻译: 公开了一种用于控制存储器件的预充电定时的方法。 该方法包括:通过产生用于控制正常操作的信号的定时,产生用于确定正常操作中的预充电定时的信号的定时和用于确定彼此不同的刷新操作中的预充电定时的信号,以及 用于控制刷新操作的信号彼此不同。

    Internal Voltage Generators for Semiconductor Memory Device
    3.
    发明申请
    Internal Voltage Generators for Semiconductor Memory Device 失效
    用于半导体存储器件的内部电压发生器

    公开(公告)号:US20070109059A1

    公开(公告)日:2007-05-17

    申请号:US11623396

    申请日:2007-01-16

    申请人: Jae Im Jae Lee

    发明人: Jae Im Jae Lee

    IPC分类号: H03K3/03

    CPC分类号: H02M3/073 H02M2001/0041

    摘要: An internal voltage generator capable of reducing the variation width in the level of an internal voltage VPP, by performing charge pumping only a predetermined number of times in a period where an oscillator driving signal is at a logic HIGH level, and then stopping the charge pumping operation. The oscillator controller generates an oscillation control signal for stopping an oscillation operation of a ring oscillator by using an output signal of a level detector and an output signal of the ring oscillator. The ring oscillator does not generate an oscillation signal at a predetermined time point where an output signal of the level detector is at a HIGH level in response to the oscillation control signal. The charge pump circuit generates an internal voltage by performing a charge pumping operation only predetermined times in response to the oscillation signal, and then stopping the charge pumping operation.

    摘要翻译: 内部电压发生器能够通过在振荡器驱动信号处于逻辑高电平的时段内仅进行预定次数的电荷泵浦来减小内部电压VPP的电平的变化宽度,然后停止电荷泵送 操作。 振荡器控制器通过使用电平检测器的输出信号和环形振荡器的输出信号产生用于停止环形振荡器的振荡操作的振荡控制信号。 响应于振荡控制信号,在电平检测器的输出信号处于高电平的预定时间点,环形振荡器不产生振荡信号。 电荷泵电路通过响应于振荡信号仅进行预定次数的电荷泵送操作来产生内部电压,然后停止电荷泵送操作。

    Internal voltage generator for semiconductor memory device
    4.
    发明申请
    Internal voltage generator for semiconductor memory device 审中-公开
    用于半导体存储器件的内部电压发生器

    公开(公告)号:US20060097804A1

    公开(公告)日:2006-05-11

    申请号:US11114372

    申请日:2005-04-26

    申请人: Jae Im Jae Lee

    发明人: Jae Im Jae Lee

    IPC分类号: H03K3/03

    CPC分类号: H02M3/073 H02M2001/0041

    摘要: An internal voltage generator capable of reducing the variation width in the level of an internal voltage VPP, by performing charge pumping only a predetermined number of times in a period where an oscillator driving signal is at a logic HIGH level, and then stopping the charge pumping operation. The oscillator controller generates an oscillation control signal for stopping an oscillation operation of a ring oscillator by using an output signal of a level detector and an output signal of the ring oscillator. The ring oscillator does not generate an oscillation signal at a predetermined time point where an output signal of the level detector is at a HIGH level in response to the oscillation control signal. The charge pump circuit generates an internal voltage by performing a charge pumping operation only predetermined times in response to the oscillation signal, and then stopping the charge pumping operation.

    摘要翻译: 内部电压发生器能够通过在振荡器驱动信号处于逻辑高电平的时段内仅进行预定次数的电荷泵浦来减小内部电压VPP的电平的变化宽度,然后停止电荷泵送 操作。 振荡器控制器通过使用电平检测器的输出信号和环形振荡器的输出信号产生用于停止环形振荡器的振荡操作的振荡控制信号。 响应于振荡控制信号,在电平检测器的输出信号处于高电平的预定时间点,环形振荡器不产生振荡信号。 电荷泵电路通过响应于振荡信号仅进行预定次数的电荷泵送操作来产生内部电压,然后停止电荷泵送操作。