公开(公告)号：US20080315425A1

公开(公告)日：2008-12-25

申请号：US12198730

申请日：2008-08-26

Applicant: Jae Suk LEE

Inventor： Jae Suk LEE

IPC: H01L23/48

CPC classification number: H01L21/76885 ,  H01L21/76837 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio.

Abstract translation: 公开了半导体器件及其制造方法。 所示的半导体器件制造方法包括在低氧化物层上形成钛和氮化钛（Ti / TiN）金属层; 在Ti / TiN金属层上形成铝金属层; 在所述铝金属层上形成氧化铟锡（ITO）层; 并通过光刻法形成ITO层，铝金属层和Ti / TiN金属层，以形成金属层图案，并露出低层氧化物层的表面，从而有助于填充相邻 通过产生具有减小的纵横比的金属层图案来形成金属层图案的线。