公开(公告)号：US07372336B2

公开(公告)日：2008-05-13

申请号：US11323744

申请日：2005-12-30

申请人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

发明人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

IPC分类号： H03F3/14

CPC分类号： H03F3/604 ,  H03F1/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/265 ,  H03F2200/537 ,  H03F2200/541

摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.

摘要翻译： 本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。 片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。 片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部 第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。

公开(公告)号：US20060170503A1

公开(公告)日：2006-08-03

申请号：US11323744

申请日：2005-12-30

申请人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

发明人： Jae-Sup Lee ,  Hyun-Il Kang ,  Seong-Soo Lee ,  Holger Lothar ,  Ju-Hyun Ko ,  Dong-Hyun Baek ,  Song-Cheol Hong

IPC分类号： H03F3/14

CPC分类号： H03F3/604 ,  H03F1/02 ,  H03F1/22 ,  H03F3/195 ,  H03F3/265 ,  H03F2200/537 ,  H03F2200/541

摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.

摘要翻译： 本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。 片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。 片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部 第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。