摘要:
An organic light emitting diode (OLED) display is provided. The OLED display includes a substrate, a subpixel on the substrate, and a multi-layered protective layer covering the subpixel. The multi-layered protective layer has a structure in which organic layers and inorganic layers are alternately stacked in a repeated manner and at least one moisture absorbing layer is interposed in the multi-layered protective layer.
摘要:
An organic light emitting diode (OLED) display is provided. The OLED display includes a substrate, a subpixel on the substrate, and a multi-layered protective layer covering the subpixel. The multi-layered protective layer has a structure in which organic layers and inorganic layers are alternately stacked in a repeated manner and at least one moisture absorbing layer is interposed in the multi-layered protective layer.
摘要:
A method for manufacturing an organic light emitting device is disclosed. In one embodiment, the method includes an organic light emitting diode comprising a first electrode, a light emission layer, and a second electrode on a substrate; forming a first protection film by loading the substrate on which the organic light emitting diode has been formed to an inkjet device in a first direction; and forming a second protection film by loading the substrate on which the first protection film has been formed in a second direction, the first and the second direction being formed differently from each other.
摘要:
A method of manufacturing an organic light emitting display is disclosed. The method includes forming a first electrode and a bank layer including an opening area exposing the first electrode on a target substrate, forming a medium substrate including an organic layer and an absorbing layer on the target substrate, forming a mask including an opening corresponding to the opening area of the bank layer on the medium substrate, emitting light on the medium substrate through the mask and transferring the organic layer on a portion of the first electrode exposed by the bank layer to form an organic light emitting layer on the target substrate, and forming a second electrode on the organic light emitting layer.
摘要:
A method of manufacturing an organic light emitting display is disclosed. The method includes forming a first electrode and a bank layer including an opening area exposing the first electrode on a target substrate, forming a medium substrate including an organic layer and an absorbing layer on the target substrate, forming a mask including an opening corresponding to the opening area of the bank layer on the medium substrate, emitting light on the medium substrate through the mask and transferring the organic layer on a portion of the first electrode exposed by the bank layer to form an organic light emitting layer on the target substrate, and forming a second electrode on the organic light emitting layer.
摘要:
Provided is an electronic device including a substrate, a pixel located on the substrate and defined by a bank layer, and a multilayer protection film placed on the pixel and composed of multiple layers including at least one organic layer. The thickness of the first organic layer of the multiple layers forming the multilayer protection film satisfies T≧k×H×W where T represents the thickness of the first organic layer, H denotes the height of the bank layer, and k is a constant that is varied according to flowability or viscosity of the first organic layer.
摘要:
Disclosed is a bits-to-symbol mapping method of 4+12+16 amplitude phase shift keying (APSK) having excellent performance against the non-linearity of a high power amplifier. According to the present invention A bits-to-symbol mapping method of 4+12+16 APSK modulation, comprising: representing 32 symbols of the 4+12+16 APSK modulation by a polar coordinate and arranging the 32 symbols by a size of θ while giving priority to a symbol having a small signal size when the size of θ of two or more symbols are same; grouping the arranged 32 symbols into 4 groups according to quadrant regions where the symbols are located; and allocating bits so that the same bits are allocated to the symbols belonging to the same region for each region with respect to each of the first to fifth bits of the symbols grouped into four regions.
摘要:
Disclosed is a bits-to-symbol mapping method of 4+12+16 amplitude phase shift keying (APSK) having excellent performance against the non-linearity of a high power amplifier. According to the present invention A bits-to-symbol mapping method of 4+12+16 APSK modulation, comprising: representing 32 symbols of the 4+12+16 APSK modulation by a polar coordinate and arranging the 32 symbols by a size of θ while giving priority to a symbol having a small signal size when the size of θ of two or more symbols are same; grouping the arranged 32 symbols into 4 groups according to quadrant regions where the symbols are located; and allocating bits so that the same bits are allocated to the symbols belonging to the same region for each region with respect to each of the first to fifth bits of the symbols grouped into four regions.