Crack Deflector Structure for Improving Semiconductor Device Robustness Against Saw-Induced Damage
    1.
    发明申请
    Crack Deflector Structure for Improving Semiconductor Device Robustness Against Saw-Induced Damage 有权
    用于提高半导体器件抗锯齿损伤鲁棒性的裂纹偏转器结构

    公开(公告)号:US20100109128A1

    公开(公告)日:2010-05-06

    申请号:US12613175

    申请日:2009-11-05

    IPC分类号: H01L23/58 H01L21/71

    摘要: An integrated circuit containing a crack deflecting scribe seal which separates an interior region of the integrated circuit from a scribeline immediately outside the integrated circuit and a method of forming the same. The crack deflecting scribe seal includes continuous metal layers and continuous contacts and continuous vias between the continuous metal layers. The continuous metal layers do not extend past the continuous contacts and continuous vias. The continuous contacts and continuous vias are recessed from edges of the underlying continuous metal layers on the scribeline side of the scribe seal, providing an angled outer surface on the scribe seal which may desirably terminate crack propagation or deflect crack propagation upward to a top surface of the scribeline or the crack deflecting scribe seal.

    摘要翻译: 一种集成电路,其包含将集成电路的内部区域与紧邻集成电路外部的划片线分隔开的裂纹偏转划线密封件及其形成方法。 裂纹偏转划线密封件包括连续金属层和连续金属层之间的连续接触和连续通孔。 连续金属层不延伸经过连续接触和连续通孔。 连续接触和连续的通孔从划线密封的划线侧的下面的连续金属层的边缘凹陷,在划线密封件上提供成角度的外表面,其可以期望地终止裂纹扩展或将裂纹传播向上偏转到顶部表面 划线或裂纹偏转划痕。

    Replacement of Scribeline Padframe with Saw-Friendly Design
    2.
    发明申请
    Replacement of Scribeline Padframe with Saw-Friendly Design 有权
    用锯切设计替代Scribeline Padframe

    公开(公告)号:US20100264413A1

    公开(公告)日:2010-10-21

    申请号:US12759005

    申请日:2010-04-13

    IPC分类号: H01L23/50 H01L21/78

    摘要: An integrated circuit substrate containing an electrical probe pad structure over, and on both sides of, a dicing kerf lane. The electrical probe pad structure includes metal crack arresting strips adjacent to the dicing kerf lane. A metal density between the crack arresting strips is less than 70 percent. An electrical probe pad structure containing metal crack arresting strips, with a metal density between the crack arresting strips less than 70 percent. A process of forming an integrated circuit by forming an electrical probe pad structure over a dicing kerf lane adjacent to the integrated circuit, such that the electrical probe pad structure has metal crack arresting strips adjacent to the dicing kerf lane, and performing a dicing operation through the electrical probe pad structure.

    摘要翻译: 一种集成电路基板,其包含在切割切割车道上方并且在其两侧的电探针焊盘结构。 电探针焊盘结构包括与切割切口通道相邻的金属裂纹阻止条。 断裂条之间的金属密度小于70%。 包含金属裂纹阻挡带的电探针垫结构,裂纹阻滞带之间的金属密度小于70%。 通过在与集成电路相邻的切割切口通道上形成电探针焊盘结构来形成集成电路的工艺,使得电探针焊盘结构具有与切割锯缝通道相邻的金属裂纹阻挡条,并且通过 电探针垫结构。