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公开(公告)号：US20120234363A1
公开(公告)日：2012-09-20
申请号：US13422078
申请日：2012-03-16
申请人： Jeong-Hee CHO , Sung-Jae Ryu , Hyung-Sin Kim , Sung-Tack Lim
发明人： Jeong-Hee CHO , Sung-Jae Ryu , Hyung-Sin Kim , Sung-Tack Lim
CPC分类号： G03F1/82
摘要： Provided is a photomask cleaning apparatus. The apparatus may include a photomask chuck, a cleaning arm and a nozzle set. The nozzle set may be installed in an end portion of the cleaning arm. The nozzle set may include a first nozzle and a second nozzle. The first nozzle and the second nozzle may be a bar-type shape and parallel to each other.
摘要翻译： 提供了一种光掩模清洁装置。 该装置可以包括光掩模卡盘，清洁臂和喷嘴组。 喷嘴组可以安装在清洁臂的端部。 喷嘴组可以包括第一喷嘴和第二喷嘴。 第一喷嘴和第二喷嘴可以是棒状并且彼此平行。
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公开(公告)号：US20050200818A1
公开(公告)日：2005-09-15
申请号：US10984524
申请日：2004-11-09
申请人： Sung-Jae Ryu , Sang-Kap Kim , Young-Kyou Park , Yoon-Ho Eo
发明人： Sung-Jae Ryu , Sang-Kap Kim , Young-Kyou Park , Yoon-Ho Eo
CPC分类号： G03F7/0012 , H01L21/67225 , H01L21/67745
摘要： A system for photolithography may include an exposure chamber providing a first isolated environment, an exposure stage in the exposure chamber, a radiation source, an interface chamber providing a second isolated environment, a port, a post exposure bake heater in the interface chamber, and a wafer handler. The exposure stage may be configured to receive a wafer having photoresist thereon to be exposed, and the radiation source may be configured to provide exposing radiation to the wafer being exposed. The port may be configured to allow wafer transport between the first and second isolated environments of the exposure and interface chambers, and the post exposure bake heater may be configured to bake the wafer after exposure. The wafer handler may be configured to move the wafer from the interface chamber through the port into the exposure chamber before exposure, to move the wafer from the exposure chamber through the port to the interface chamber after exposure, and to move the wafer to the post exposure bake heater after moving the wafer from the exposure chamber. Moreover, at least one of a photoresist coating unit and/or a photoresist developing unit may be excluded from the first and second isolated environments of the exposure and interface chambers. Related methods are also discussed.
摘要翻译： 用于光刻的系统可以包括提供第一隔离环境的曝光室，曝光室中的曝光阶段，辐射源，提供第二隔离环境的界面室，接口室中的曝光后加热器，以及 晶圆处理机。 曝光阶段可以被配置为接收具有待曝光的其上具有光刻胶的晶片，并且所述辐射源可被配置为向被曝光的晶片提供曝光辐射。 端口可以被配置为允许在曝光和接口室的第一和第二隔离环境之间的晶片传输，并且后曝光烘烤加热器可以被配置为在曝光之后烘烤晶片。 晶片处理器可以被配置为在曝光之前将晶片从接口室通过端口移动到曝光室中，以在曝光之后将晶片从曝光室通过端口移动到界面室，并且将晶片移动到柱 曝光烘烤加热器从曝光室移动晶片后。 此外，可以从曝光和界面室的第一和第二隔离环境中排除光致抗蚀剂涂覆单元和/或光致抗蚀剂显影单元中的至少一个。 还讨论了相关方法。
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公开(公告)号：US07268853B2
公开(公告)日：2007-09-11
申请号：US10984524
申请日：2004-11-09
申请人： Sung-Jae Ryu , Sang-Kap Kim , Young-Kyou Park , Yoon-Ho Eo
发明人： Sung-Jae Ryu , Sang-Kap Kim , Young-Kyou Park , Yoon-Ho Eo
CPC分类号： G03F7/0012 , H01L21/67225 , H01L21/67745
摘要： A system for photolithography may include an exposure chamber providing a first isolated environment, an exposure stage in the exposure chamber, a radiation source, an interface chamber providing a second isolated environment, a port, a post exposure bake heater in the interface chamber, and a wafer handler. The exposure stage may be configured to receive a wafer having photoresist thereon to be exposed, and the radiation source may be configured to provide exposing radiation to the wafer being exposed. The port may be configured to allow wafer transport between the first and second isolated environments of the exposure and interface chambers, and the post exposure bake heater may be configured to bake the wafer after exposure. The wafer handler may be configured to move the wafer from the interface chamber through the port into the exposure chamber before exposure, to move the wafer from the exposure chamber through the port to the interface chamber after exposure, and to move the wafer to the post exposure bake heater after moving the wafer from the exposure chamber. Moreover, at least one of a photoresist coating unit and/or a photoresist developing unit may be excluded from the first and second isolated environments of the exposure and interface chambers. Related methods are also discussed.
摘要翻译： 用于光刻的系统可以包括提供第一隔离环境的曝光室，曝光室中的曝光阶段，辐射源，提供第二隔离环境的界面室，接口室中的曝光后加热器，以及 晶圆处理机。 曝光阶段可以被配置为接收具有待曝光的其上具有光刻胶的晶片，并且所述辐射源可被配置为向被曝光的晶片提供曝光辐射。 端口可以被配置为允许在曝光和接口室的第一和第二隔离环境之间的晶片传输，并且后曝光烘烤加热器可以被配置为在曝光之后烘烤晶片。 晶片处理器可以被配置为在曝光之前将晶片从接口室通过端口移动到曝光室中，以在曝光之后将晶片从曝光室通过端口移动到界面室，并且将晶片移动到柱 曝光烘烤加热器从曝光室移动晶片后。 此外，可以从曝光和界面室的第一和第二隔离环境中排除光致抗蚀剂涂覆单元和/或光致抗蚀剂显影单元中的至少一个。 还讨论了相关方法。
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