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公开(公告)号:US08580630B2
公开(公告)日:2013-11-12
申请号:US13278335
申请日:2011-10-21
申请人: Jianxin Lei , Xinyu Fu , Srinivas Gandikota , Jian Z. Ren
发明人: Jianxin Lei , Xinyu Fu , Srinivas Gandikota , Jian Z. Ren
IPC分类号: H01L21/8238
CPC分类号: H01L21/28088 , H01L29/4966
摘要: Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer.
摘要翻译: 本文提供了在基板上形成金属栅极结构的方法。 在一些实施例中,在衬底上形成具有介电层的衬底上形成金属栅极结构的方法可以包括沉积金属层,同时提供包含氧的工艺气体,以在电介质层的顶部形成氧掺杂的功函数层; 以及在电介质层顶上沉积金属栅极层。