公开(公告)号：US6107158A

公开(公告)日：2000-08-22

申请号：US47959

申请日：1998-03-25

申请人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

发明人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

IPC分类号： H01L21/762 ,  H01L21/306

CPC分类号： H01L21/76232 ,  Y10S438/978

摘要： A shallow trench isolation structure and method for forming such structure. In one embodiment, the semiconductor device isolating structure of the present invention includes a trench formed into a semiconductor substrate. A cross-section of the trench has a first sidewall sloping inwardly towards the center of a substantially planar bottom surface, and a second sidewall sloping inwardly towards the center of the substantially planar bottom surface. Additionally, a cross section of the trench has a first rounded bottom trench corner at an interface of the first sidewall and the substantially planar bottom surface, and a second rounded bottom trench corner at an interface of the second sidewall and the substantially planar bottom surface. Furthermore, the trench of the present invention has a first rounded upper trench corner at the interface of the first sidewall and the top surface of the semiconductor substrate, and a second rounded upper trench corner at the interface of the second sidewall and the top surface of the semiconductor substrate. Thus, the trench of the present invention does not have micro-trenches formed into the bottom surface thereof. Additionally, the present invention does not have the sharp upper and bottom corners found in conventional trenches formed using a shallow trench isolation method. The present invention also provides a method to eliminate deleterious micromasking and spike formation.

摘要翻译： 浅沟槽隔离结构及其形成方法。 在一个实施例中，本发明的半导体器件隔离结构包括形成半导体衬底的沟槽。 沟槽的横截面具有朝向基本上平坦的底表面的中心向内倾斜的第一侧壁和朝向基本平坦的底表面的中心向内倾斜的第二侧壁。 此外，沟槽的横截面具有在第一侧壁和基本上平坦的底表面的界面处的第一圆形底部沟槽角以及在第二侧壁和基本上平坦的底表面的界面处的第二圆形底部沟槽拐角。 此外，本发明的沟槽在第一侧壁和半导体衬底的顶表面的界面处具有第一圆形上沟槽角，以及在第二侧壁和第二侧壁的顶表面的界面处的第二圆形上沟槽角 半导体衬底。 因此，本发明的沟槽不具有形成在其底表面中的微沟槽。 此外，本发明不具有使用浅沟槽隔离方法形成的常规沟槽中发现的尖锐的上部和下部角落。 本发明还提供消除有害的微掩模和尖峰形成的方法。

公开(公告)号：US5939765A

公开(公告)日：1999-08-17

申请号：US977645

申请日：1997-11-24

申请人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

发明人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

IPC分类号： H01L21/762 ,  H01L29/00

CPC分类号： H01L21/76232 ,  Y10S438/978

摘要： A shallow trench isolation structure and method for forming such structure. In one embodiment, the semiconductor device isolating structure of the present invention includes a trench formed into a semiconductor substrate. A cross-section of the trench has a first sidewall sloping inwardly towards the center of a substantially planar bottom surface, and a second sidewall sloping inwardly towards the center of the substantially planar bottom surface. Additionally, a cross section of the trench has a first rounded bottom trench corner at an interface of the first sidewall and the substantially planar bottom surface, and a second rounded bottom trench corner at an interface of the second sidewall and the substantially planar bottom surface. Furthermore, the trench of the present invention has a first rounded upper trench corner at the interface of the first sidewall and the top surface of the semiconductor substrate, and a second rounded upper trench corner at the interface of the second sidewall and the top surface of the semiconductor substrate. Thus, the trench of the present invention does not have micro-trenches formed into the bottom surface thereof. Additionally, the present invention does not have the sharp upper and bottom corners found in conventional trenches formed using a shallow trench isolation method. The present invention also provides a method to eliminate deleterious micromasking and spike formation.

摘要翻译： 浅沟槽隔离结构及其形成方法。 在一个实施例中，本发明的半导体器件隔离结构包括形成半导体衬底的沟槽。 沟槽的横截面具有朝向基本上平坦的底表面的中心向内倾斜的第一侧壁和朝向基本平坦的底表面的中心向内倾斜的第二侧壁。 此外，沟槽的横截面具有在第一侧壁和基本上平坦的底表面的界面处的第一圆形底部沟槽角以及在第二侧壁和基本上平坦的底表面的界面处的第二圆形底部沟槽拐角。 此外，本发明的沟槽在第一侧壁和半导体衬底的顶表面的界面处具有第一圆形上沟槽角，以及在第二侧壁和第二侧壁的顶表面的界面处的第二圆形上沟槽角 半导体衬底。 因此，本发明的沟槽不具有形成在其底表面中的微沟槽。 此外，本发明不具有使用浅沟槽隔离方法形成的常规沟槽中发现的尖锐的上部和下部角落。 本发明还提供消除有害的微掩模和尖峰形成的方法。

公开(公告)号：US5882982A

公开(公告)日：1999-03-16

申请号：US786365

申请日：1997-01-16

申请人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

发明人： Jie Zheng ,  Calvin Todd Gabriel ,  Suzanne Monsees

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76232 ,  Y10S438/978

摘要： A shallow trench isolation structure and method for forming such structure. In one embodiment, the semiconductor device isolating structure of the present invention includes a trench formed into a semiconductor substrate. A cross-section of the trench has a first sidewall sloping inwardly towards the center of a substantially planar bottom surface, and a second sidewall sloping inwardly towards the center of the substantially planar bottom surface. Additionally, a cross section of the trench has a first rounded bottom trench corner at an interface of the first sidewall and the substantially planar bottom surface, and a second rounded bottom trench corner at an interface of the second sidewall and the substantially planar bottom surface. Furthermore, the trench of the present invention has a first rounded upper trench corner at the interface of the first sidewall and the top surface of the semiconductor substrate, and a second rounded upper trench corner at the interface of the second sidewall and the top surface of the semiconductor substrate. Thus, the trench of the present invention does not have micro-trenches formed into the bottom surface thereof Additionally, the present invention does not have the sharp upper and bottom comers found in conventional trenches formed using a shallow trench isolation method. The present invention also provides a method to eliminate deleterious micromasking and spike formation.

摘要翻译： 浅沟槽隔离结构及其形成方法。 在一个实施例中，本发明的半导体器件隔离结构包括形成半导体衬底的沟槽。 沟槽的横截面具有朝向基本上平坦的底表面的中心向内倾斜的第一侧壁和朝向基本平坦的底表面的中心向内倾斜的第二侧壁。 此外，沟槽的横截面具有在第一侧壁和基本上平坦的底表面的界面处的第一圆形底部沟槽角以及在第二侧壁和基本上平坦的底表面的界面处的第二圆形底部沟槽拐角。 此外，本发明的沟槽在第一侧壁和半导体衬底的顶表面的界面处具有第一圆形上沟槽角，以及在第二侧壁和第二侧壁的顶表面的界面处的第二圆形上沟槽角 半导体衬底。 因此，本发明的沟槽不具有形成在其底表面上的微沟槽。此外，本发明在使用浅沟槽隔离方法形成的常规沟槽中没有发现尖锐的上下角。 本发明还提供消除有害的微掩模和尖峰形成的方法。