Method for measuring concentrations of dopants in a liquid carrier on a wafer surface
    1.
    发明授权
    Method for measuring concentrations of dopants in a liquid carrier on a wafer surface 有权
    用于测量晶片表面上的液体载体中的掺杂剂浓度的方法

    公开(公告)号:US06373576B1

    公开(公告)日:2002-04-16

    申请号:US09459728

    申请日:1999-12-13

    申请人: Jiunn Der Yang

    发明人: Jiunn Der Yang

    IPC分类号: G01N2155

    CPC分类号: H01L22/34 G01N21/9501

    摘要: A method for non-destructively testing for the concentration of a component of a film that is used for doping a region of a semiconductor wafer uses an image histogram of the light reflected from an array of points on the film and the underlying substrate. The image histogram has peaks that are characteristic of the composition of the film. Tests are run to establish the image histogram peaks for a film with a normal concentration of the components and for films with low and high concentrations. When the same test is made for the film of a production wafer, the concentration of the component is readily classified as normal, high, or low.

    摘要翻译: 用于对用于掺杂半导体晶片的区域的膜的成分的浓度进行非破坏性测试的方法使用从膜上的点阵列和下面的基底反射的光的图像直方图。 图像直方图具有作为胶片组成的特征的峰。 进行测试以建立具有正常浓度组分的膜和具有低和高浓度的膜的图像直方图峰。 当对生产晶片的膜进行相同的测试时,组分的浓度容易分类为正常,高或低。