公开(公告)号：US20110101317A1

公开(公告)日：2011-05-05

申请号：US12922416

申请日：2009-03-13

申请人： John James Gregory ,  Barry Wild ,  Hidehiro Yoshida ,  Kenji Okumoto

发明人： John James Gregory ,  Barry Wild ,  Hidehiro Yoshida ,  Kenji Okumoto

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L27/3246

摘要： A method of manufacturing an electronic device comprises: providing a base comprising circuit elements; forming a double bank well-defining structure over the base, comprising a first layer of insulating material and a second layer of insulating material thereover; and depositing a solution of organic material in the well defined by the double bank structure. The double bank well-defining structure is formed by removing material from the first and second layers in a single processing step to form the well. The first layer is made of a material which is removed at a faster rate than material of the second layer to form an overhanging step structure in which the second layer protrudes out over an edge of the first layer.

摘要翻译： 一种制造电子设备的方法包括：提供包括电路元件的基座; 在所述基底上形成双层阱定义结构，包括第一层绝缘材料和其上的第二绝缘材料层; 并将有机材料溶液沉积在由双银行结构限定的阱中。 通过在单个处理步骤中从第一层和第二层去除材料形成双层阱定义结构以形成井。 第一层由比第二层材料更快的速度除去的材料制成，以形成其中第二层在第一层的边缘上突出的突出的台阶结构。