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公开(公告)号:US20050114588A1
公开(公告)日:2005-05-26
申请号:US10722813
申请日:2003-11-26
申请人: Jonathan Lucker , Robert Faber , Mark Isenberger
发明人: Jonathan Lucker , Robert Faber , Mark Isenberger
CPC分类号: G11C11/22 , G06F12/0866
摘要: Briefly, in accordance with an embodiment of the invention, an apparatus and method to improve memory performance is provided. The method may include performing a read cycle that includes a destructive read operation and a write back operation, wherein the destructive read operation includes reading information from a first memory cell of a memory and wherein the write back operation includes writing the information read from the first memory cell to a second memory cell of the memory.
摘要翻译: 简而言之,根据本发明的实施例,提供了一种用于提高存储器性能的装置和方法。 该方法可以包括执行包括破坏性读取操作和回写操作的读取周期,其中所述破坏性读取操作包括从存储器的第一存储器单元读取信息,并且其中所述回写操作包括写入从所述第一 存储器单元到存储器的第二存储器单元。