公开(公告)号：US20080090356A1

公开(公告)日：2008-04-17

申请号：US11956153

申请日：2007-12-13

申请人： Jong-Chul PARK ,  Jun SEO ,  Tae-Hyuk AHN ,  Hyuk-Jin KWON ,  Jong-Heui SONG ,  Dae-Keun KANG

发明人： Jong-Chul PARK ,  Jun SEO ,  Tae-Hyuk AHN ,  Hyuk-Jin KWON ,  Jong-Heui SONG ,  Dae-Keun KANG

IPC分类号： H01L21/336

CPC分类号： H01L29/66553 ,  H01L29/66621 ,  H01L29/7834

摘要： A method according to some embodiments of the invention includes defining an active region by forming a trench device isolation region on an integrated substrate, forming a mask pattern that exposes a channel sub-region of the active region and the trench device isolation region adjacent to the channel sub-region, etching the trench device isolation region, which is exposed by the mask pattern, to be recessed to a first depth using the mask pattern as an etch mask, etching the channel sub-region to form a gate trench having a second depth that is deeper than the first depth using the mask pattern as an etch mask, and forming a recess gate that fills the gate trench.

摘要翻译： 根据本发明的一些实施例的方法包括通过在集成衬底上形成沟槽器件隔离区域来限定有源区域，形成掩模图案，其暴露有源区域的沟道子区域和与该区域相邻的沟槽器件隔离区域 使用掩模图案作为蚀刻掩模蚀刻由掩模图案曝光的沟槽器件隔离区域，以凹陷到第一深度，蚀刻沟道子区域以形成栅极沟槽，栅极沟道具有第二 深度比使用掩模图案的第一深度深的蚀刻掩模，以及形成填充栅极沟槽的凹槽。