OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    氧化物薄膜晶体管及其制造方法

    公开(公告)号:US20120012839A1

    公开(公告)日:2012-01-19

    申请号:US13243584

    申请日:2011-09-23

    IPC分类号: H01L33/16

    摘要: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.

    摘要翻译: 液晶显示(LCD)装置的制造方法包括:在基板上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成具有锥形部分的主要有源层至所述主要有源层的沟道区域侧,以及在所述主要有源层上形成源极和漏极; 以及在所述源电极和漏电极上形成由非晶形氧化锌基半导体制成的二次有源层,并与所述主有源层的所述锥形部分接触,其中所述主有源层在湿蚀刻期间以低选择性被蚀刻 源电极和漏电极具有锥形部分。

    OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    氧化物薄膜晶体管及其制造方法

    公开(公告)号:US20100301325A1

    公开(公告)日:2010-12-02

    申请号:US12618073

    申请日:2009-11-13

    摘要: A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.

    摘要翻译: 液晶显示(LCD)装置的制造方法包括:在基板上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成具有锥形部分的主要有源层至所述主要有源层的沟道区域侧,以及在所述主要有源层上形成源极和漏极; 以及在所述源极和漏极上形成由非晶形氧化锌基半导体制成的第二有源层,并且与所述主有源层的所述锥形部分接触,其中所述主有源层在湿蚀刻期间以低选择性被蚀刻 源电极和漏电极具有锥形部分。