公开(公告)号：US20070148904A1

公开(公告)日：2007-06-28

申请号：US11616711

申请日：2006-12-27

Applicant: June Woo Lee

Inventor： June Woo Lee

IPC: H01L21/76

CPC classification number: C23C16/46 ,  C23C16/52

Abstract: An HDP-CVD apparatus includes a valve assembly, a pump, and a control unit for adjusting the supply of He gas to be within a preset range through control of the valve assembly and the pump so that an actual wafer temperature, which was previously determined, is maintained at a preset temperature during a deposition process.

Abstract translation: HDP-CVD装置包括阀组件，泵和控制单元，用于通过阀组件和泵的控制将He气体的供给调节到预设范围内，从而使得预先确定的实际晶片温度 在沉积过程中保持在预设温度。

公开(公告)号：US08845378B2

公开(公告)日：2014-09-30

申请号：US13526379

申请日：2012-06-18

Applicant: June Woo Lee ,  Jae Beom Choi ,  Kwan Wook Jung ,  Guang Hai Jin

Inventor： June Woo Lee ,  Jae Beom Choi ,  Kwan Wook Jung ,  Guang Hai Jin

IPC: H01J9/00 ,  H01J9/50

CPC classification number: G09G3/3225 ,  G09G3/006 ,  G09G2300/0426 ,  G09G2330/02 ,  G09G2330/08

Abstract: A display apparatus and a method of repairing a display apparatus are disclosed. According to one aspect, the display includes a plurality of unit pixels each including a plurality of sub pixels, scan lines branching off a scan wire in a first direction for each of the plurality of unit pixels and connecting the plurality of sub pixels emitting the same color as that of a neighboring unit pixel, data lines extending in a second direction orthogonal to the first direction and connected to the plurality of sub pixels, a first power supply line extending in the second direction and connected to the plurality of sub pixels, and second power supply lines extending in the first direction and connected to the first power supply line.

Abstract translation: 公开了一种显示装置和修理显示装置的方法。 根据一个方面，显示器包括多个单位像素，每个单元像素包括多个子像素，对于多个单位像素中的每一个，沿着第一方向分支扫描线的扫描线，并且连接发射该像素的多个子像素 与相邻单位像素的颜色相同的数据线，沿与第一方向正交并连接到多个子像素的第二方向延伸的数据线，沿第二方向延伸并连接到多个子像素的第一电源线，以及 第二电源线在第一方向上延伸并连接到第一电源线。

公开(公告)号：US07517799B2

公开(公告)日：2009-04-14

申请号：US11320408

申请日：2005-12-29

Applicant: June Woo Lee

Inventor： June Woo Lee

IPC: H01L21/44

CPC classification number: H01L21/76838 ,  H01L21/76837 ,  H01L21/76885

Abstract: A method for forming a plurality of metal lines in a semiconductor device including forming first insulating layer patterns on a semiconductor substrate, the first insulating patterns being spaced from each other; depositing a metal layer on and between the first insulating layer patterns; planarizing the metal layer; patterning the planarized metal layer to form the plurality of metal lines between the first insulating layer patterns; and forming a second insulating layer on and between the metal lines.

Abstract translation: 一种在半导体器件中形成多个金属线的方法，包括在半导体衬底上形成第一绝缘层图案，所述第一绝缘图案彼此间隔开; 在第一绝缘层图案之间和之间沉积金属层; 平面化金属层; 图案化平坦化的金属层以在第一绝缘层图案之间形成多个金属线; 以及在金属线之间和之间形成第二绝缘层。

公开(公告)号：US07473984B2

公开(公告)日：2009-01-06

申请号：US11710917

申请日：2007-02-27

Applicant: June Woo Lee

Inventor： June Woo Lee

IPC: H01L29/40

CPC classification number: H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.

Abstract translation: 一种在半导体器件中制造多个布线金属的方法。 该方法包括在半导体衬底上形成下布线金属，在下布线金属上形成层间电介质，并选择性地去除层间电介质以形成接触电介质膜，体电介质膜和接触体和体电介质膜之间的开口 。 该方法还包括用低k材料填充开口，在接触体和体电介质膜和低k材料上形成覆盖电介质，形成穿过封盖电介质的接触孔和接触电介质膜，以连接到 下布线金属，并且通过接触孔形成与下布线金属电互连的上布线金属。

公开(公告)号：US07202158B2

公开(公告)日：2007-04-10

申请号：US11320590

申请日：2005-12-30

Applicant: June Woo Lee

Inventor： June Woo Lee

IPC: H01L21/4763

CPC classification number: H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.

Abstract translation: 一种在半导体器件中制造多个布线金属的方法。 该方法包括在半导体衬底上形成下布线金属，在下布线金属上形成层间电介质，并选择性地去除层间电介质以形成接触电介质膜，体电介质膜和接触体和体电介质膜之间的开口 。 该方法还包括用低k材料填充开口，在接触体和体电介质膜和低k材料上形成覆盖电介质，形成穿过封盖电介质的接触孔和接触电介质膜，以连接到 下布线金属，并且通过接触孔形成与下布线金属电互连的上布线金属。