公开(公告)号：US20080081465A1

公开(公告)日：2008-04-03

申请号：US11747444

申请日：2007-05-11

申请人： Jung Geun Kim ,  Cheol-Mo Jeong ,  Whee-Won Cho ,  Seong-Hwan Myung

发明人： Jung Geun Kim ,  Cheol-Mo Jeong ,  Whee-Won Cho ,  Seong-Hwan Myung

IPC分类号： H01L21/44

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/28273

摘要： A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.

摘要翻译： 一种制造半导体器件的方法，其中可以防止在具有拉伸应力的蚀刻层上形成非晶碳膜而发生提升现象。 根据本发明，由于可以减小蚀刻层或非晶碳膜上的压缩应力，或者在蚀刻层或非晶碳膜之间形成压缩应力膜，以防止发生升降现象，因此可以是其他图案 形成以制造高度集成的半导体器件。