公开(公告)号：US20100155719A1

公开(公告)日：2010-06-24

申请号：US12639115

申请日：2009-12-16

申请人： Junichiro SAKATA ,  Tadashi SERIKAWA

发明人： Junichiro SAKATA ,  Tadashi SERIKAWA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In a manufacturing process of a semiconductor device formed using a thin film transistor, an object is to provide a technique by which the number of photomasks can be reduced, manufacturing cost can be reduced, and improvement in productivity and reliability can be achieved. A main point is that a film forming a channel protective layer is formed over an oxide semiconductor layer having a light-transmitting property, a positive photoresist is formed over the film forming a channel protective layer, and a channel protective layer is selectively formed over a channel formation region in the oxide semiconductor layer by using a back surface light exposure method.

摘要翻译： 在使用薄膜晶体管形成的半导体器件的制造工艺中，目的是提供可以减少光掩模数量，降低制造成本，并且可以实现生产率和可靠性的提高的技术。 主要的一点是形成沟道保护层的膜形成在具有透光性的氧化物半导体层之上，在形成沟道保护层的膜上形成正性光致抗蚀剂，并且沟道保护层选择性地形成在 通过使用背面曝光方法在氧化物半导体层中形成沟道形成区域。