公开(公告)号：US20110070675A1

公开(公告)日：2011-03-24

申请号：US12884823

申请日：2010-09-17

申请人： Jyrki KIIHAMAKI ,  Hannu KATTELUS

发明人： Jyrki KIIHAMAKI ,  Hannu KATTELUS

IPC分类号： H01L21/02

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

摘要翻译： 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。