公开(公告)号：US10121770B2

公开(公告)日：2018-11-06

申请号：US15551381

申请日：2016-02-10

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Hans-Helmut Bechtel ,  Erik Nelson ,  April Dawn Schricker

IPC: H01L25/075 ,  H01L27/15

Abstract: A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.

公开(公告)号：US20180068988A1

公开(公告)日：2018-03-08

申请号：US15551381

申请日：2016-02-10

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Hans-Helmut Bechtel ,  Erik Nelson ,  April Dawn Schricker

IPC: H01L25/075 ,  H01L27/15

CPC classification number: H01L25/0756 ,  H01L27/15 ,  H01L2224/32145 ,  H01L2224/48465 ,  H01L2224/73265

Abstract: A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.