公开(公告)号：US20230253061A1

公开(公告)日：2023-08-10

申请号：US17951544

申请日：2022-09-23

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jun-Bo YOON ,  Yong-bok Lee ,  Pan-kyu Choi ,  Su-hyun Kim ,  Tae-Soo Kim

IPC: G11C23/00

CPC classification number: G11C23/00

Abstract: The present invention relates to a mechanical interconnect memory, and more particularly, to a mechanical interconnect memory applicable to smart interconnect technology that reduces the power consumption of an interconnect layer.
A mechanical interconnect memory according to an embodiment of the present invention comprises: an upper electrode including: a spring part having at least one upward protruding portion between both ends of the spring part; and a moving part having one end of the moving part fixed to the at least one upward protruding portion of the spring part and the other end of the moving part being a free end of the moving part that is capable of moving up and down; and a lower electrode at least partially disposed under the moving part.