专利检索 ap:("KOREA INSTITUTE OF ENERGY RESEARCH") AND inv:"Hyun Seok Cho" 第 1 页

1.

发明授权
Manufacturing method of silicon carbide and silicon carbide manufactured using the same 有权

公开(公告)号：US10759664B2

公开(公告)日：2020-09-01

申请号：US15855246

申请日：2017-12-27

申请人： KOREA INSTITUTE OF ENERGY RESEARCH

发明人： Won Chul Cho , Myung Won Seo , Hae In Lee , Jae Goo Lee , Ki Kwang Bae , Chang Hee Kim , Jong Won Kim , Chu Sik Park , Kyoung-Soo Kang , Seong Uk Jeong , Hyun Seok Cho

IPC分类号： C01B32/97 , C01B32/963 , C01F5/00 , C01F5/04 , C01F5/02 , C01B33/22 , C01B33/06

摘要： A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

2.

发明申请
MANUFACTURING METHOD OF SILICON CARBIDE AND SILICON CARBIDE MANUFACTURED USING THE SAME 审中-公开

公开(公告)号：US20180179071A1

公开(公告)日：2018-06-28

申请号：US15855246

申请日：2017-12-27

申请人： KOREA INSTITUTE OF ENERGY RESEARCH

发明人： Won Chul Cho , Myung Won Seo , Hae In Lee , Jae Goo Lee , Ki Kwang Bae , Chang Hee Kim , Jong Won Kim , Chu Sik Park , Kyoung-Soo Kang , Seong Uk Jeong , Hyun Seok Cho

IPC分类号： C01B32/97 , C01B32/963 , C01B33/06 , C01F5/00

CPC分类号： C01B32/97 , C01B32/963 , C01B33/06 , C01B33/22 , C01F5/00 , C01F5/02 , C01F5/04 , C01P2006/12 , C01P2006/14 , C01P2006/16 , C01P2006/44

摘要： A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.