公开(公告)号：US11359277B2

公开(公告)日：2022-06-14

申请号：US16880432

申请日：2020-05-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehyun Park ,  Dongjun Lee

IPC: C23C16/34 ,  C23C16/04 ,  C23C16/02 ,  C23C16/455

Abstract: A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, includes a base substrate; a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and a hexagonal boron nitride film that is doped with carbon and oxygen that is disposed on the gamma-alumina film, and that has reduced defects due to properties of the gamma-alumina film, wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film and includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9.