公开(公告)号：US10446703B1

公开(公告)日：2019-10-15

申请号：US16023859

申请日：2018-06-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byoung Koun Min ,  Gi Soon Park ,  Hyung Suk Oh ,  Yun Jeong Hwang

IPC: H01L31/032 ,  C23C16/30 ,  C23C16/02 ,  H01L31/0392 ,  H01L31/0272

Abstract: Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.