公开(公告)号：US20190267453A1

公开(公告)日：2019-08-29

申请号：US16283411

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu JU ,  Jin-Dong SONG ,  Joonyeon CHANG ,  Gyosub LEE

IPC: H01L29/205 ,  H01L29/737 ,  H01L29/66

Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.