公开(公告)号：US20250162900A1

公开(公告)日：2025-05-22

申请号：US18824778

申请日：2024-09-04

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Taegon OH ,  Jaeeun YOON ,  Seong Chan KIM ,  Hyo Jin LEE ,  Albert LEE ,  Seon Joon KIM ,  Seung Sang HWANG ,  Chong Min KOO

IPC: C01G23/00

Abstract: The present invention provides a halogen-free MXene represented by the following formula (1), that has no halogen in its surface functional group by performing an etching process to generate MXene from a MAX Phase material, and after the etching process, performing an impurity removal treatment process of etching and removing impurities using a halogen-free etchant and a halogen-free post-treatment agent, respectively. Mn+1XnTx  [Formula 1] wherein, M is a transition metal element selected from the group consisting of Sc, Ti, V, Cr, Mn, Y, Zr, Nb, Mo, Hf, and Ta, X is at least one of carbon and nitrogen, and n is an integer from 1 to 4, and Tx is a functional group selected from the group consisting of oxygen, alkoxide of 1 to 5 carbon atoms, alkyl, carboxylate, hydroxide, hydride, oxide, sub-oxide, nitride, sub-nitride, sulfide, sulfonate, thiol, and epoxide.