公开(公告)号：US11753297B2

公开(公告)日：2023-09-12

申请号：US17078096

申请日：2020-10-23

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myoung Woon Moon ,  Sun Mi Yoon ,  Young A Lee

IPC: C03C15/00 ,  B82B3/00 ,  B82B1/00

CPC classification number: B82B3/0019 ,  B82B1/001 ,  C03C15/00 ,  C03C2218/33

Abstract: The present invention relates to: a method of manufacturing glass with hollow nanopillars, which includes a silicon oxide layer forming step in which a silicon oxide layer made of silicon oxide is formed on one side of a glass substrate, a first etching step in which the silicon oxide layer is etched and a plurality of silicon oxide clusters are formed on the glass substrate, and a second etching step in which the glass substrate, on which the silicon oxide clusters are formed, is etched and hollow nanopillars are formed; and glass with hollow nanopillars manufactured thereby.