公开(公告)号：US10739301B2

公开(公告)日：2020-08-11

申请号：US15684939

申请日：2017-08-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Kwan Hyi Lee ,  Minhong Jeun ,  Seok Lee ,  Sang Kyung Kim ,  Sungwook Park

IPC: H01L29/45 ,  G01N27/414

Abstract: Provided is a field-effect transistor that can reduce noise, be produced by a simplified manufacturing method, and also have a plurality of active patterns and gate patterns designed to be combinable according to a detection purpose. The field-effect transistor includes a lower silicon layer and a buried oxide layer disposed on the lower silicon layer; an active pattern disposed on the buried oxide layer and including a channel region, a source region, and a drain region; a gate pattern disposed on the active pattern to at least partially overlap the active pattern; a source electrode disposed in direct contact with the source region on the active pattern, and a drain electrode disposed in direct contact with the drain region on the active pattern; and a gate insulating film disposed between the active pattern and the gate pattern.