公开(公告)号：US20200325032A1

公开(公告)日：2020-10-15

申请号：US16090953

申请日：2017-04-04

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Jun Hong NOH ,  Seong Sik SHIN ,  Jang Won SEO ,  Sang Il SEOK

IPC: C01G19/00 ,  H01G9/20 ,  B05D1/00 ,  B05D3/02

Abstract: The present invention relates to a method for preparing a BaSnO3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

公开(公告)号：US20230178307A1

公开(公告)日：2023-06-08

申请号：US17997599

申请日：2021-07-09

Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY

Inventor： Nam Joong JEON ,  Jang Won SEO ,  Geun KIM ,  Seong Sik SHIN ,  Seung Joo LEE ,  Young Woong KIM

IPC: H01G9/20 ,  H10K85/50 ,  H10K85/10 ,  H10K30/30 ,  H10K30/40

CPC classification number: H01G9/2009 ,  H10K85/50 ,  H10K85/111 ,  H10K30/30 ,  H10K30/40

Abstract: An organic hole transport material according to an embodiment of the present disclosure is an organic hole transport material doped with an acid-base adduct, in which the acid-base adduct is formed by an acid-base reaction involving an acid and a base, and the acid contains hydrogen ions (H+) and has the formula H+X−, where H+ corresponds to a hydrogen ion, and X− corresponds to an anion and corresponds to TFSI−.