公开(公告)号：US20080266981A1

公开(公告)日：2008-10-30

申请号：US12173742

申请日：2008-07-15

申请人： KWANG WOOK KOH ,  Jeong-Uk Han

发明人： KWANG WOOK KOH ,  Jeong-Uk Han

IPC分类号： G11C11/34 ,  H01L29/788

CPC分类号： G11C16/0433 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42328 ,  H01L29/7885

摘要： A nonvolatile memory device includes first and second impurity diffusion regions formed in a semiconductor substrate, and a memory cell formed on a channel region of a semiconductor substrate between the first and second impurity diffusion regions. The memory cell includes a stacked gate structure formed on the channel region, and first and second select gates formed on the channel regions and opposite sidewalls of the stacked gate structure. Since the first and second select gates are spacer-shaped to be self-aligned on opposite sidewalls of the stacked gate structure, a size of a memory cell is reduced to enhance an integration density of a semiconductor device.

摘要翻译： 非易失性存储器件包括形成在半导体衬底中的第一和第二杂质扩散区，以及形成在第一和第二杂质扩散区之间的半导体衬底的沟道区上的存储单元。 存储单元包括形成在沟道区上的堆叠栅极结构，以及形成在堆叠栅极结构的沟道区和相对侧壁上的第一和第二选择栅。 由于第一选择栅极和第二选择栅极是间隔形状以在层叠栅极结构的相对侧壁上自对准，所以减小了存储单元的尺寸以增强半导体器件的集成密度。