公开(公告)号：US20040175860A1

公开(公告)日：2004-09-09

申请号：US10701483

申请日：2003-11-06

申请人： KWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Seong-Ju Park ,  Kyoung-Kook Kim

IPC分类号： H01L021/00

CPC分类号： H01L21/477

摘要： Disclosed herein is a method for manufacturing a zinc oxide semiconductor. The method comprises the steps of forming a zinc oxide thin film including a group V element as a dopant on a substrate by using a zinc oxide compound containing a group V element or an oxide thereof, charging the substrate having the zinc oxide thin film formed thereon into a chamber for thermal annealing, and thermal annealing the substrate in the chamber to activate the dopant, thereby changing the zinc oxide thin film exhibiting n-type electrical properties or insulator properties to a zinc oxide thin film exhibiting p-type electrical properties. According to the method, since a zinc oxide thin film exhibiting n-type electrical properties can be easily changed to a zinc oxide thin film exhibiting p-type electrical properties, the provision of holes required for optical devices is facilitated, thereby enabling the development of photoelectric devices such as light-emitting diodes, laser diodes and UV sensors and further extending applicability of the zinc oxide semiconductor.

摘要翻译： 本文公开了一种制造氧化锌半导体的方法。 该方法包括以下步骤：通过使用含有V族元素或其氧化物的氧化锌化合物在基板上形成包含V族元素作为掺杂剂的氧化锌薄膜，对其上形成有氧化锌薄膜的基板 进入用于热退火的室，以及对室中的基板进行热退火以激活掺杂剂，从而将具有n型电性能或绝缘体性质的氧化锌薄膜改变为具有p型电性能的氧化锌薄膜。 根据该方法，由于具有n型电性能的氧化锌薄膜可以容易地变为具有p型电性能的氧化锌薄膜，因此容易提供光学器件所需的孔，从而能够开发 光电器件如发光二极管，激光二极管和紫外线传感器，并进一步延长氧化锌半导体的适用性。