公开(公告)号：US20200161527A1

公开(公告)日：2020-05-21

申请号：US16675396

申请日：2019-11-06

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

发明人： Kazuhiro SUGIMOTO ,  Shinji Munetoh ,  Osamu Furukimi

IPC分类号： H01L35/32 ,  H01L35/22 ,  H01L35/30

摘要： A thermoelectric conversion element includes a p-type semiconductor, an n-type semiconductor, and a depletion layer located at a pn junction interface of the p-type semiconductor and the n-type semiconductor. At least one of the p-type semiconductor and the n-type semiconductor is a degenerate semiconductor.

公开(公告)号：US11217739B2

公开(公告)日：2022-01-04

申请号：US16619447

申请日：2018-06-07

申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION

发明人： Ryo Teranishi ,  Shinji Munetoh ,  Osamu Furukimi

IPC分类号： H01L35/14 ,  H01L35/20 ,  H01L35/22 ,  H01L35/34

摘要： A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10−4/μm or more. AxByC46-y   (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.