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1.发明授权公开(公告)号：US10027378B2
公开(公告)日：2018-07-17
申请号：US15266933
申请日：2016-09-15
发明人： Toshiyuki Umeda , Hideo Kasami , Takeshi Ueno
摘要： According to one embodiment, a power reception device includes: a power receiver that wirelessly receives power from a power transmission device; a power storage that stores the power received by the power receiver; and a signal transmitter configured to transmit a detection signal, the signal transmitter being independent of a power system operating with power fed from the power storage.
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公开(公告)号：US10158240B2
公开(公告)日：2018-12-18
申请号：US15212481
申请日：2016-07-18
发明人： Takeshi Ueno , Toshiyuki Umeda
摘要： An electrical storage device according to an embodiment includes a power generator; a first-type capacitor that stores the electrical power generated by the power generator; second-type capacitors that are connected to the first-type capacitor in parallel; switches each of which is connected to one of the second-type capacitors; and a control circuit that controls the switches. Every time either a charging voltage or an observation voltage proportional to the charging voltage exceeds a first threshold value, the control circuit controls the switches in such a way that the i+1-th second-type capacitor (where i is an integer equal to or greater than zero) is additionally connected to the first-type capacitor in parallel.
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3.发明授权公开(公告)号：US09325362B2
公开(公告)日：2016-04-26
申请号：US13973226
申请日：2013-08-22
发明人： Toshiyuki Umeda , Shoji Otaka
CPC分类号： H04B1/18 , H02J5/005 , H02J50/10 , H02M1/088 , H03K17/302 , H03K2017/307
摘要： A rectification circuit includes a first field-effect transistor and a bias voltage generation circuit. The field-effect transistor includes a first gate terminal, a first source terminal, a first source region having a first p-type diffusion layer and connected to the first source terminal, a first drain terminal, and a first drain region having a first n-type diffusion layer and connected to the first drain terminal. The bias voltage generation circuit is configured to apply a DC voltage between the first gate terminal and the first drain terminal.
摘要翻译： 整流电路包括第一场效应晶体管和偏置电压产生电路。 场效应晶体管包括第一栅极端子，第一源极端子，具有第一p型扩散层并连接到第一源极端子的第一源极区域，第一漏极端子和第一漏极区域， 型扩散层并连接到第一漏极端子。 偏置电压产生电路被配置为在第一栅极端子和第一漏极端子之间施加直流电压。
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公开(公告)号：US09025408B2
公开(公告)日：2015-05-05
申请号：US14258665
申请日：2014-04-22
发明人： Toshiyuki Umeda , Shoji Otaka
CPC分类号： H03L5/00 , G11C5/148 , G11C11/417
摘要： According to an embodiment, a semiconductor integrated circuit includes a regulator, a level shifter and a switch circuit. The regulator converts an input voltage that is a difference in potential between a first terminal and a third terminal into an output voltage that is a difference in potential between a second terminal and the third terminal. The level shifter adjusts a voltage level between a first terminal and a second terminal. The switch circuit includes a first switch selectively connecting the third terminal of the regulator to a first potential, a second switch selectively connecting the third terminal of the regulator to the first terminal of the level shifter, and a third switch selectively connecting the third terminal of the regulator to a second potential.
摘要翻译： 根据实施例，半导体集成电路包括调节器，电平转换器和开关电路。 调节器将作为第一端子和第三端子之间的电位差的输入电压转换为作为第二端子和第三端子之间的电位差的输出电压。 电平移位器调节第一端子和第二端子之间的电压电平。 开关电路包括：第一开关，其将调节器的第三端子选择性地连接到第一电位;第二开关，其将调节器的第三端子选择性地连接到电平移位器的第一端子;以及第三开关， 调节器达到第二个潜力。
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