公开(公告)号：US08767359B2

公开(公告)日：2014-07-01

申请号：US13314797

申请日：2011-12-08

申请人： Kai Zhu ,  Huijuan Cheng ,  Jie Chen ,  Zhiguang Guo ,  Hongwei Li

发明人： Kai Zhu ,  Huijuan Cheng ,  Jie Chen ,  Zhiguang Guo ,  Hongwei Li

IPC分类号： H02H3/22

CPC分类号： H02H9/046

摘要： An ESD protection circuit and method for its use are provided. The circuit comprising: a discharge path formed by first and second NMOS transistors which are sequentially connected between a ground and a power supply; an ESD event detection unit; first and second drive units respectively connected between an output of the ESD event detection unit and a gate of the first transistor and between the output of the ESD event detection unit and a gate of the second transistor. The first and second drive units respectively cause the first and second transistors to be turned on during an ESD event and to be turned off when there is no ESD event.

摘要翻译： 提供了一种ESD保护电路及其使用方法。 该电路包括：由第一和第二NMOS晶体管形成的放电路径，其依次连接在地和电源之间; ESD事件检测单元; 分别连接在ESD事件检测单元的输出和第一晶体管的栅极之间以及ESD事件检测单元的输出和第二晶体管的栅极之间的第一和第二驱动单元。 第一和第二驱动单元分别在ESD事件期间使第一和第二晶体管导通，并且在没有ESD事件时被关断。