公开(公告)号：US5505986A

公开(公告)日：1996-04-09

申请号：US195999

申请日：1994-02-14

申请人： Karl-Otto Velthaus ,  Reiner H. Mauch ,  T. Achim Oberacker ,  Hans-Werner Schock ,  Sey-Shing Sun ,  Randall C. Wentross ,  Richard T. Tuenge

发明人： Karl-Otto Velthaus ,  Reiner H. Mauch ,  T. Achim Oberacker ,  Hans-Werner Schock ,  Sey-Shing Sun ,  Randall C. Wentross ,  Richard T. Tuenge

IPC分类号： C09K11/77 ,  C09K11/88 ,  C23C14/06 ,  C23C14/24 ,  C23C14/54 ,  H01L21/363 ,  H05B33/10 ,  B05D5/06

CPC分类号： C23C14/24 ,  C09K11/7718 ,  C09K11/7731 ,  C09K11/886 ,  C23C14/0623 ,  C23C14/541 ,  H05B33/10

摘要： A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M.sup.II M.sup.III.sub.2 X.sub.4 :RE, where M.sup.II is a group II metal taken from the group magnesium, calcium, strontium and barium, M.sup.III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400.degree. and 800.degree. C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound.

摘要翻译： 用于制备具有化学式MIIMIII2X4：RE的AC TFEL器件的荧光体层的多源反应沉积方法，其中MII是从镁，钙，锶和钡组中获得的II族金属，MIII是III族金属 取自铝，镓和铟组，X取自硫和硒组，RE包含从铈组取的稀土活化剂掺杂剂，并且公开了铕。 荧光体膜通过沉积多于一种的沉积源化学品而形成在加热到400-800℃温度的基板上，其中至少一种第二族金属或III族金属的沉积源化学物质 是一种化合物。