摘要:
A mechanical response of an implantable medical device (IMD) to a first static magnetic field and a first gradient magnetic field slew rate is simulated by exposing the IMD to a second static magnetic field having a magnitude greater than the first static magnetic field and generating a second gradient magnetic field at the IMD such that a product of the second static magnetic field and a second gradient magnetic field slew rate is substantially equal to a product of the first static magnetic field and the first gradient magnetic field slew rate.