公开(公告)号：US5536358A

公开(公告)日：1996-07-16

申请号：US307236

申请日：1994-09-16

申请人： Kazuaki Ashizuka ,  Hironobu Miyamoto

发明人： Kazuaki Ashizuka ,  Hironobu Miyamoto

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/00

CPC分类号： H01L22/12

摘要： The invention provides a method of estimating damage which a semiconductor substrate has suffered in a dry etching step included in a semiconductor fabricating step. The invention includes the steps of forming a delta-doped donor layer at a predetermined depth measuring from a surface of the semiconductor, measuring electron concentrations of the semiconductor before and after the dry etching step, and calculating a difference between the delta-doped donor concentrations to thereby quantitatively estimate a distribution of the damage throughout the depth of the semiconductor.

摘要翻译： 本发明提供了一种在半导体制造步骤中包括的干蚀刻步骤中估计半导体衬底遭受的损坏的方法。 本发明包括以下步骤：在从半导体表面测量的预定深度处形成δ-掺杂的施主层，测量干蚀刻步骤之前和之后的半导体的电子浓度，以及计算δ-掺杂的供体浓度 从而定量估计半导体整个深度的损伤分布。