Manufacturing method of silicon nozzle plate and manufacturing method of inkjet head
    1.
    发明授权
    Manufacturing method of silicon nozzle plate and manufacturing method of inkjet head 有权
    硅喷嘴板的制造方法和喷墨头的制造方法

    公开(公告)号:US08034247B2

    公开(公告)日:2011-10-11

    申请号:US11805891

    申请日:2007-05-25

    IPC分类号: C23F1/00 G11B5/127

    摘要: A manufacturing method of a silicon nozzle plate, having; a film forming process to provide the film representing an etching mask for etching the silicon substrate on a surface of the silicon substrate; a pattern film forming to form a pattern film by partially removing the film based on a nozzle hole forming pattern and an outer shape forming pattern; a silicon substrate etching process to form nozzle holes based on the nozzle hole forming pattern representing the etching mask, and to form a half etching portion at least in a part of the silicon substrate based on the outer shape forming pattern; and a silicon substrate separating process to separate the silicon substrate by splitting along the half etching portion.

    摘要翻译: 一种硅喷嘴板的制造方法,具有: 提供表示用于在硅衬底的表面上蚀刻硅衬底的蚀刻掩模的膜的成膜工艺; 形成图案膜以通过基于喷嘴孔形成图案和外部形状图案部分去除膜而形成图案膜; 基于表示蚀刻掩模的喷嘴孔形成图案形成喷嘴孔的硅基板蚀刻工艺,并且至少在硅基板的一部分基于外部成形图案形成半蚀刻部分; 以及硅衬底分离工艺,以通过沿着半蚀刻部分裂而分离硅衬底。

    Manufacturing method of silicon nozzle plate and manufacturing method of inkjet head
    2.
    发明申请
    Manufacturing method of silicon nozzle plate and manufacturing method of inkjet head 有权
    硅喷嘴板的制造方法和喷墨头的制造方法

    公开(公告)号:US20070278181A1

    公开(公告)日:2007-12-06

    申请号:US11805891

    申请日:2007-05-25

    IPC分类号: C03C25/68 B44C1/22

    摘要: A manufacturing method of a silicon nozzle plate, having; a film forming process to provide the film representing an etching mask for etching the silicon substrate on a surface of the silicon substrate; a pattern film forming to form a pattern film by partially removing the film based on a nozzle hole forming patter and an outer shape forming pattern; a silicon substrate etching process to form nozzle holes based on the nozzle hole forming pattern representing the etching mask, and to form a half etching portion at least in a part of the silicon substrate based on the outer shape forming patter; and a silicon substrate separating process to separate the silicon substrate by splitting along the half etching portion.

    摘要翻译: 一种硅喷嘴板的制造方法,具有: 提供表示用于在硅衬底的表面上蚀刻硅衬底的蚀刻掩模的膜的成膜工艺; 通过基于喷嘴孔形成图案和外形形状图案部分地除去膜而形成图案膜以形成图案膜; 硅衬底蚀刻工艺,基于表示蚀刻掩模的喷嘴孔形成图案形成喷嘴孔,并且基于外形形成图案至少在硅衬底的一部分上形成半蚀刻部分; 以及硅衬底分离工艺,以通过沿着半蚀刻部分裂而分离硅衬底。