公开(公告)号：US09238876B2

公开(公告)日：2016-01-19

申请号：US13141802

申请日：2009-12-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00 ,  B08B7/04 ,  C30B29/06 ,  C01B33/037 ,  C01B33/035

CPC分类号： C30B29/06 ,  C01B33/035 ,  C01B33/037

摘要： A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.

摘要翻译： 提供洗涤多晶硅的方法。 该方法包括酸洗的步骤，其中用酸溶液清洗多晶硅，以及在酸洗步骤之后用纯水清洗多晶硅的水清洗步骤。 在水洗步骤中，通过将多晶硅浸入保持在水洗浴中的纯水中并将水洗涤浴中的纯水替换至少一次来除去多晶硅表面上的残留酸溶液。 测量清洗槽中纯水的电导率（C）。 根据电导率（C）的读数，决定水洗步骤的完成时间。

公开(公告)号：US20110120506A1

公开(公告)日：2011-05-26

申请号：US12929585

申请日：2011-02-02

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US07905963B2

公开(公告)日：2011-03-15

申请号：US12591622

申请日：2009-11-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/04

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

公开(公告)号：US20100132746A1

公开(公告)日：2010-06-03

申请号：US12591622

申请日：2009-11-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/08 ,  B08B13/00

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US08875720B2

公开(公告)日：2014-11-04

申请号：US12929585

申请日：2011-02-02

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/04 ,  H01L21/677 ,  C01B33/037

CPC分类号： C01B33/037

摘要： Disclosed is a polycrystalline silicon washing apparatus that sequentially immerses polycrystalline silicon into a plurality of acid baths each of which is filled with an acid to wash the polycrystalline silicon. The temperatures of the acids in the acid baths are set such that the temperature of the acid in a later acid bath of adjacent acid baths is equal to or lower than that of a former acid bath and the temperature of the acid in the last acid bath is lower than that of the acid in the first acid bath. Each of the acid baths is provided with a temperature adjusting unit that controls the temperature of the acid at a constant value.

摘要翻译： 公开了一种多晶硅洗涤装置，其将多晶硅顺序浸渍在多个酸浴中，每个酸浴充满酸以洗涤多晶硅。 将酸浴中的酸的温度设定为使得相邻酸浴的后期酸浴中的酸的温度等于或低于前一个酸浴的酸温度，并且酸在最后酸浴中的温度 比第一酸浴中的酸低。 每个酸浴设置有温度调节单元，其将酸的温度控制在恒定值。

公开(公告)号：US20110253177A1

公开(公告)日：2011-10-20

申请号：US13141802

申请日：2009-12-25

申请人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

发明人： Kazuhiro Sakai ,  Tetsuya Atsumi ,  Yukiyasu Miyata

IPC分类号： B08B3/00

CPC分类号： C30B29/06 ,  C01B33/035 ,  C01B33/037

摘要： A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.

摘要翻译： 提供洗涤多晶硅的方法。 该方法包括酸洗的步骤，其中用酸溶液清洗多晶硅，以及在酸洗步骤之后用纯水清洗多晶硅的水清洗步骤。 在水洗步骤中，通过将多晶硅浸入保持在水洗浴中的纯水中并将水洗涤浴中的纯水替换至少一次来除去多晶硅表面上的残留酸溶液。 测量清洗槽中纯水的电导率（C）。 根据电导率（C）的读数，决定水洗步骤的完成时间。

公开(公告)号：US20120243897A1

公开(公告)日：2012-09-27

申请号：US13490767

申请日：2012-06-07

申请人： Tetsuya Atsumi ,  Kunitoshi Aoki ,  Yukio Nagase

发明人： Tetsuya Atsumi ,  Kunitoshi Aoki ,  Yukio Nagase

IPC分类号： G03G15/00

CPC分类号： G03G15/5041 ,  G03G2215/00042

摘要： A toner amount measuring unit irradiates a toner image formed on an image carrying member with light, and an image capturing unit captures an image of a reflected waveform according to light reflected by the toner image. Then, an amount of applied toner is calculated based on the peak position or peak height of the reflected waveform in accordance with information associated with the density of the toner image to be formed.

摘要翻译： 调色剂量测量单元用光照射形成在图像承载构件上的调色剂图像，并且图像捕获单元根据由调色剂图像反射的光捕获反射波形的图像。 然后，根据与要形成的调色剂图像的浓度相关联的信息，基于反射波形的峰值位置或峰值高度计算所施加的调色剂量。

公开(公告)号：US08213820B2

公开(公告)日：2012-07-03

申请号：US12498523

申请日：2009-07-07

申请人： Tetsuya Atsumi ,  Kunitoshi Aoki ,  Yukio Nagase

发明人： Tetsuya Atsumi ,  Kunitoshi Aoki ,  Yukio Nagase

IPC分类号： G03G15/00

CPC分类号： G03G15/5041 ,  G03G2215/00042

摘要： A toner amount measuring unit irradiates a toner image formed on an image carrying member with light, and an image capturing unit captures an image of a reflected waveform according to light reflected by the toner image. Then, an amount of applied toner is calculated based on the peak position or peak height of the reflected waveform in accordance with information associated with the density of the toner image to be formed.

摘要翻译： 调色剂量测量单元用光照射形成在图像承载构件上的调色剂图像，并且图像捕获单元根据由调色剂图像反射的光捕获反射波形的图像。 然后，根据与要形成的调色剂图像的浓度相关联的信息，基于反射波形的峰值位置或峰值高度计算所施加的调色剂量。

公开(公告)号：USD602107S1

公开(公告)日：2009-10-13

申请号：US29304910

申请日：2008-03-10

申请人： Kouji Shiga ,  Tetsuya Atsumi ,  Takashi Kaneko ,  Tsutomu Ibuki

设计人： Kouji Shiga ,  Tetsuya Atsumi ,  Takashi Kaneko ,  Tsutomu Ibuki

公开(公告)号：US5517227A

公开(公告)日：1996-05-14

申请号：US79825

申请日：1993-06-23

申请人： Tetsuya Atsumi ,  Hisashi Fukushima ,  Nobuatsu Sasanuma

发明人： Tetsuya Atsumi ,  Hisashi Fukushima ,  Nobuatsu Sasanuma

IPC分类号： B41J2/44 ,  G02B26/12 ,  G03G15/00 ,  G03G15/01 ,  G03G15/02 ,  G03G15/04 ,  G03G15/043 ,  G03G15/08 ,  H04N1/04 ,  H04N1/29 ,  H04N1/407 ,  H04N1/21

CPC分类号： G03G15/5062 ,  G03G15/0266 ,  H04N1/29 ,  H04N1/4076

摘要： This invention relates an image forming apparatus capable of automatically adjusting image formation conditions. A transfer medium having a detecting pattern image formed by an apparatus main body is read by an original reading unit. A look-up table for setting latent image formation conditions is corrected on the basis of a read output, thereby correcting image densities in a main-scan direction and/or a sub-scan direction.

摘要翻译： 本发明涉及能够自动调整图像形成条件的图像形成装置。 具有由装置主体形成的检测图案图像的转印介质由原稿读取单元读取。 基于读取输出校正用于设置潜像形成条件的查找表，从而校正主扫描方向和/或副扫描方向上的图像浓度。