公开(公告)号：US08435417B2

公开(公告)日：2013-05-07

申请号：US12827259

申请日：2010-06-30

申请人： Kazunari Nakata ,  Kaoru Motonami ,  Atsushi Narazaki ,  Ayumu Onoyama ,  Shigeto Honda ,  Ryoichi Fujii ,  Tomoya Hirata

发明人： Kazunari Nakata ,  Kaoru Motonami ,  Atsushi Narazaki ,  Ayumu Onoyama ,  Shigeto Honda ,  Ryoichi Fujii ,  Tomoya Hirata

IPC分类号： B44C1/22

CPC分类号： H01L21/3083 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/30105 ,  H01L2924/00

摘要： A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.

摘要翻译： 在半导体衬底的前表面上形成有从外周端向内侧具有预定宽度且沿外周端部延伸的钝化膜。 通过研磨半导体衬底的外周端部形成与前表面和后表面正交的外周端面。 通过研磨后表面将半导体衬底的厚度减小到预定厚度。 通过将混合酸排放到后表面上同时使后表面朝上的半导体衬底旋转来蚀刻地面后表面，以除去断裂层。 由此，能够抑制半导体基板的切削或破裂。

公开(公告)号：US20110059612A1

公开(公告)日：2011-03-10

申请号：US12827259

申请日：2010-06-30

申请人： Kazunari NAKATA ,  Kaoru Motonami ,  Atsushi Narazaki ,  Ayumu Onoyama ,  Shigeto Honda ,  Ryoichi Fujii ,  Tomoya Hirata

发明人： Kazunari NAKATA ,  Kaoru Motonami ,  Atsushi Narazaki ,  Ayumu Onoyama ,  Shigeto Honda ,  Ryoichi Fujii ,  Tomoya Hirata

IPC分类号： H01L21/302

CPC分类号： H01L21/3083 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/30105 ,  H01L2924/00

摘要： A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear surface. The ground rear surface is etched by discharging a mixed acid onto the rear surface while rotating the semiconductor substrate with the rear surface facing upward, to remove a fracture layer. Thereby, chipping or cracking of the semiconductor substrate is suppressed.

摘要翻译： 在半导体衬底的前表面上形成有从外周端向内侧具有预定宽度且沿外周端部延伸的钝化膜。 通过研磨半导体衬底的外周端部形成与前表面和后表面正交的外周端面。 通过研磨后表面将半导体衬底的厚度减小到预定厚度。 通过将混合酸排放到后表面上同时使后表面朝上的半导体衬底旋转来蚀刻地面后表面，以除去断裂层。 由此，能够抑制半导体基板的切削或破裂。

公开(公告)号：US06429910B1

公开(公告)日：2002-08-06

申请号：US09666819

申请日：2000-09-21

申请人： Tomoya Hirata ,  Tae Miyahara

发明人： Tomoya Hirata ,  Tae Miyahara

IPC分类号： G02F11335

CPC分类号： G02F1/136259 ,  G02F1/136204 ,  G02F2001/136272

摘要： In order to use an auxiliary wiring 4 formed on one of opposing substrates as a bypass line of one of circuit lines arranged in matrix on the same substrate, which has a broken portion, cross points (A and B) of the auxiliary wiring 4 and the broken circuit line are electrically connected by removing an insulating film between the auxiliary wiring and the circuit line by irradiating these cross points with a laser beam. An electrostatic protective element 10 is provided in each of cross points of the auxiliary wiring and the circuit lines and the auxiliary wiring is connected to a common terminal 13 connected to an opposing electrode formed on the other opposing substrate such that the potential of the auxiliary wiring can be removed.

摘要翻译： 为了使用形成在相对基板之一上的辅助布线4作为布置在同一基板上的电路线之一的旁路线路，该基板具有断开部分，辅助配线4的交叉点（A和B）和 通过用激光束照射这些交叉点，通过去除辅助布线和电路线之间的绝缘膜来电连接断路。 在辅助布线和电路线的交叉点的每个交叉点设有静电保护元件10，并且辅助布线连接到与形成在另一相对基板上的相对电极连接的公共端子13，使得辅助布线 可以删除