公开(公告)号：US20110311736A1

公开(公告)日：2011-12-22

申请号：US13046208

申请日：2011-03-11

申请人： Kazuyuki NAKANISHI ,  Takashi ISEKI ,  Yasuhiro OZAWA ,  Yuka YAMADA ,  Seiji MIZUNO ,  Katsumi SATO ,  Masafumi KOIZUMI ,  Yoshiyuki FUNAKI ,  Kyouji KONDO ,  Takayuki KIKUCHI

发明人： Kazuyuki NAKANISHI ,  Takashi ISEKI ,  Yasuhiro OZAWA ,  Yuka YAMADA ,  Seiji MIZUNO ,  Katsumi SATO ,  Masafumi KOIZUMI ,  Yoshiyuki FUNAKI ,  Kyouji KONDO ,  Takayuki KIKUCHI

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/26

CPC分类号： C23C16/26 ,  C23C16/503 ,  C23C16/545

摘要： This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.

摘要翻译： 本发明采用等离子体增强化学气相沉积法，该装置包括一个室，一对旋转电极卷轴，包括一个送出卷轴和一个卷取卷轴，等离子体源，原料气体供应器和排气单元，以及 包括在从所述送出卷轴送出导电性基板并卷绕在所述卷取卷轴上时，施加从所述等离子体源施加到所述旋转电极卷轴上的负电压，使得所述基板部分在卷盘接触之间的整个表面 材料气体，由此在卷轴之间沿着基板部分的表面形成等离子体护套，并且材料气体在等离子体护套中被激活，并且因此接触基板的表面，从而在基板的表面上形成膜。