公开(公告)号：US06879527B2

公开(公告)日：2005-04-12

申请号：US10614013

申请日：2003-07-08

申请人： Kee-Won Kwon ,  Youn-Cheol Kim

发明人： Kee-Won Kwon ,  Youn-Cheol Kim

IPC分类号： G11C8/18 ,  G11C7/10 ,  G11C7/00

CPC分类号： G11C7/1012 ,  G11C7/1051

摘要： A semiconductor memory device includes a plurality of memory array blocks including predetermined numbers of memory cells, the memory array blocks being arranged in the row direction; a RAS chain being aligned at a side of the plurality of memory array blocks in the row direction, the RAS chain for selecting and activating a particular word line; a CAS chain being aligned at the other side of the plurality of memory array blocks in the column direction, the CAS chain for amplifying N bits of data from the plurality of memory array blocks and outputting the result to an input/output (IO) line, wherein N is a natural number more than 2; and a data converter for continuously outputting the N bits of data input via the IO line from a memory array block nearest to the RAS chain to a memory array block farthest from the RAS chain.

摘要翻译： 半导体存储器件包括多个存储器阵列块，其包括预定数量的存储器单元，存储器阵列块被布置在行方向上; RAS链在行方向上的多个存储器阵列块的一侧对齐，RAS链用于选择和激活特定字线; CAS链在列方向上在多个存储器阵列块的另一侧对准，CAS链用于从多个存储器阵列块放大N位数据，并将结果输出到输入/输出（IO）线 其中N是大于2的自然数; 以及数据转换器，用于将最靠近RAS链的存储器阵列块经由IO线输入的N位数据连续地输出到距离RAS链最远的存储器阵列块。