公开(公告)号：US5786304A

公开(公告)日：1998-07-28

申请号：US313053

申请日：1994-09-30

Applicant: Keiichi Kimura ,  Katuyoshi Miyamoto ,  Misao Hashimoto

Inventor： Keiichi Kimura ,  Katuyoshi Miyamoto ,  Misao Hashimoto

IPC: C04B37/00 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24

CPC classification number: C04B35/4508 ,  C04B37/005 ,  H01L39/02 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6585 ,  C04B2237/06 ,  C04B2237/34 ,  C04B2237/68 ,  C04B2237/708 ,  C04B2237/78 ,  C04B2237/82 ,  C04B2237/86 ,  C04B2237/88 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/704 ,  Y10S505/927

Abstract: A joining product of oxide superconducting materials having a high current density and process for producing the same. A joining product comprising a plurality of oxide superconducting materials having an identical crystal orientation joined with each other through a superconducting phase of the same type as described above which has the same crystal orientation as the oxide superconducting materials and a lower peritectic temperature than the oxide superconducting materials. A joining method comprising the steps of: regulating oxide superconducting materials to be joined so that they have an identical crystal orientation; either inserting as a solder a material comprising elements constituting an oxide superconductor having a lower peritectic temperature than the oxide superconducting materials or bringing the material comprising elements constituting an oxide superconductor having a lower peritectic temperature than the oxide superconducting materials into contact with the oxide superconducting materials to be joined; heating the assembly to a temperature below the peritectic temperature of the superconducting materials to be joined and above the peritectic temperature of the solder; and gradually cooling the heated assembly to orient and grow the same type of oxide superconductor at the joining interface. A junction product of oxide superconducting materials free from such crystal grain boundary as to inhibit the current flow and having a high critical current density can be provided and can be utilized as a magnet, a magnetic shield and a current leading material.

Abstract translation: PCT No.PCT / JP93 / 00432 Sec。 371日期1994年9月30日 102（e）1994年9月30日PCT 1993年4月2日PCT公布。 公开号WO93 / 2002500 日期为1993年10月14日，是具有高电流密度的氧化物超导材料的接合产物及其制造方法。 一种连接产品，其包括具有相同晶体取向的多个氧化物超导材料，所述多个氧化物超导材料通过与上述相同类型的超导相相互连接，所述超导相具有与氧化物超导材料相同的晶体取向，并且具有比氧化物超导的更低的包晶温度 材料 一种接合方法，包括以下步骤：调节待接合的氧化物超导材料，使其具有相同的晶体取向; 作为焊料插入构成具有比氧化物超导材料低的包晶温度的氧化物超导体的元素的材料，或者使包含构成具有比氧化物超导材料低的包晶温度的氧化物超导体的元素的材料与氧化物超导材料接触 加入; 将组件加热到低于待接合的超导材料的包晶温度并高于焊料的包晶温度的温度; 并逐渐冷却加热的组件以在接合界面处定向和生长相同类型的氧化物超导体。 可以提供不含这种晶界的氧化物超导材料的接合产物，以抑制电流和具有高的临界电流密度，并且可以用作磁体，磁屏蔽和电流引导材料。