公开(公告)号：US20110095398A1

公开(公告)日：2011-04-28

申请号：US12908542

申请日：2010-10-20

申请人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

发明人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

IPC分类号： H01L29/417 ,  H01L21/8222

CPC分类号： H01L29/7322 ,  H01L29/0804 ,  H01L29/1608 ,  H01L29/41708 ,  H01L29/66068 ,  H01L29/66272

摘要： A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×1017 cm−3.

摘要翻译： 双极半导体器件包括：集电极区域，其是形成在半导体晶体衬底的一个表面中的n型低电阻层，集电极区域上的n型第一高电阻区域， 第一高电阻区域，形成在半导体晶体衬底的另一表面中的n型低电阻发射极区域，在发射极区域和基极区域之间的n型第二高电阻区域，以便接触发射极 区域，以与第二高电阻区域相邻的第二高电阻区域周围的n型复合抑制区域和与复合抑制区域相邻设置的p型低电阻碱性接触区域， 并且其接触基部区域。 第二高电阻区域和复合抑制区域的掺杂浓度各自为1×1017cm-3以下。