公开(公告)号：US20250081436A1

公开(公告)日：2025-03-06

申请号：US18823386

申请日：2024-09-03

Applicant: Kioxia Corporation

Inventor： Kotaro NODA ,  Akio KANEKO ,  Masayuki MURASE ,  Akifumi GAWASE ,  Kazuhiro KATONO

IPC: H10B12/00

Abstract: According to one embodiment, a semiconductor device includes a first electrode with a first electrode portion and a second electrode portion on the first electrode portion. An oxide semiconductor layer is on the second electrode portion. A gate electrode layer surrounds part of an outer side wall of the oxide semiconductor layer. A gate insulating layer surrounds the outer side wall of the oxide semiconductor layer such that the gate insulating layer is between the oxide semiconductor layer and the gate electrode layer. A distance between the second electrode portion and the gate electrode layer is less than a distance between the first electrode portion and the gate electrode layer.