公开(公告)号：US20210288038A1

公开(公告)日：2021-09-16

申请号：US17016827

申请日：2020-09-10

Applicant: Kioxia Corporation

Inventor： Atsushi OGA ,  Natsuki FUKUDA ,  Moto YABUKI

IPC: H01L25/18 ,  H01L23/00 ,  H01L27/11582 ,  H01L21/762

Abstract: A semiconductor memory device includes a first chip and a second chip. The first chip includes a semiconductor substrate and a plurality of transistors disposed on a surface of the semiconductor substrate. The second chip includes a plurality of first conductive layers, a plurality of first semiconductor layers, and a plurality of memory cells disposed in intersection portions of the plurality of first conductive layers and the plurality of first semiconductor layers. The second chip includes a second semiconductor layer farther from the semiconductor substrate than the plurality of first conductive layers and connected to the plurality of first semiconductor layers and a first insulating layer that includes a part farther from the semiconductor substrate than a surface on aside opposite to the semiconductor substrate of the second semiconductor layer and a part closer to the semiconductor substrate than the surface.

公开(公告)号：US20240321819A1

公开(公告)日：2024-09-26

申请号：US18592860

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Sadatoshi MURAKAMI ,  Atsushi OGA

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a first substrate provided with a first film; forming a second film on or above a second substrate; forming a third film on or above the second film; forming a fourth film on or above the third film; forming a stacked body by bonding a main surface of the first film and a main surface of the fourth film; performing irradiation with a laser beam from a side of the second substrate of the stacked body; and separating the second substrate in a state of including at least portion of the second film. The second film and the fourth film each includes a first material. The third film includes a second material different from the first material. The second film and the third film have different composition. The fourth film and the third film have different composition.