公开(公告)号：US20240422982A1

公开(公告)日：2024-12-19

申请号：US18740858

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Daisuke KITAGAWA ,  Kensei TAKAHASHI

IPC: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device according to the present embodiment includes a first insulator, a conductive layer, and a film. The film is provided between the first insulator and the conductive layer and contains carbon (C) or silicon (Si). The semiconductor device further comprises a stacked body in which insulating layers and the conductive layers are alternately stacked in a first direction, a semiconductor layer disposed in the first direction in the stacked body, a second insulator disposed in the first direction between the stacked body and the semiconductor layer, a third insulator disposed in the first direction between the stacked body and the second insulator, and a fourth insulator disposed in the first direction between the stacked body and the third insulator. The first insulator is disposed between the conductive layers and the insulating layers and between the conductive layers and the fourth insulator.