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公开(公告)号：US11574663B2
公开(公告)日：2023-02-07
申请号：US17109853
申请日：2020-12-02
Applicant: Kioxia Corporation
Inventor： Keisuke Nakatsuka , Tomoya Sanuki , Takashi Maeda , Go Shikata , Hideaki Aochi
IPC: G11C7/10 , G11C7/08 , H01L27/11573 , G11C16/26 , H01L27/11529 , G11C7/18
Abstract: A data latch circuit includes a first n-channel transistor and a first p-channel transistor. A gate of the first n-channel transistor and a gate of the first p-channel transistor are a common gate.
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